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vs-st303sp series www.vishay.com vishay semiconductors revision: 08-jul-14 1 document number: 94375 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 inverter grade thyristors (stud version), 300 a features ? center amplifying gate ? high surge current capability ? low thermal impedance ? high speed performance ? compression bonding ? designed and qualified for industrial level ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications ?inverters ? choppers ? induction heating ? all types of force-commutated converters ? ? electrical specifications product summary i t(av) 300 a v drm /v rrm 400 v, 1200 v v tm 2.16 v i tsm at 50 hz 3000 a i tsm at 60 hz 3150 a i gt 200 ma t j -40 c to 125 c package to-209ae (to-118) diode variation single scr to- 209ae (to-118) major ratings and characteristics parameter test conditions values units i t(av) 300 a t c 65 c i t(rms) 471 a i tsm 50 hz 7950 60 hz 8320 i 2 t 50 hz 316 ka 2 s 60 hz 288 v drm /v rrm 400 to 1200 v t q 10/20 s t j -40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak voltage v v rsm , maximum non- repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma vs-st303s 04 400 500 50 08 800 900 12 1200 1300
vs-st303sp series www.vishay.com vishay semiconductors revision: 08-jul-14 2 document number: 94375 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 current carrying capability frequency units 50 hz 670 470 1050 940 5240 4300 a 400 hz 480 330 1021 710 1800 1270 1000 hz 230 140 760 470 730 430 2500 hz 35 - 150 - 90 - recovery voltage v r 50 50 50 v voltage before turn-on v d v drm v drm v drm rise of on-state current di/dt 50 - - a/s case temperature 406540654065c equivalent values for rc circuit 10/0.47 10/0.47 10/0.47 ?? f on-state conduction parameter symbol test conditions values units maximum average on-state current ? at case temperature i t(av) 180 conduction, half sine wave 300 a 65 c maximum rms on-state current i t(rms) dc at 45 c case temperature 471 a maximum peak, one half cycle, ? non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, ? initial t j = t j maximum 7950 t = 8.3 ms 8320 t = 10 ms 100 % v rrm ? reapplied 6690 t = 8.3 ms 7000 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 316 ka 2 s t = 8.3 ms 288 t = 10 ms 100 % v rrm ? reapplied 224 t = 8.3 ms 204 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 3160 ka 2 ? s maximum peak on -state voltage v tm i tm = 1255 a, t j = t j maximum, ? t p = 10 ms sine wave pulse 2.16 v low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.44 high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 1.46 low level value of forward slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.57 m ? high level value of forward slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 0.56 maximum holding current i h t j = 25 c, i t > 30 a 600 ma typical latchi ng current i l t j = 25 c, v a = 12 v, r a = 6 ? , i g = 1 a 1000 switching parameter symbol test conditions values units maximum non-repe titive rate of ? rise of turned-on current di/dt t j = t j maximum, v drm = rated v drm ? i tm = 2 x di/dt 1000 a/s typical delay time t d t j = 25 c, v dm = rated v drm , i tm = 50 a dc, t p = 1 s ? resistive load, gate pulse: 10 v, 5 ? source 0.80 s maximum turn-off time minimum t q t j = t j maximum, ? i tm = 550 a, commutating di/dt = 40 a/s ? v r = 50 v, t p = 500 s, dv/dt = 200 v/s 10 maximum 20 180 el i tm 180 el i tm 100 s i tm
vs-st303sp series www.vishay.com vishay semiconductors revision: 08-jul-14 3 document number: 94375 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at different conduction angles than dc ? ? ? blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum, linear to 80 % v drm , ? higher value available on request 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 50 ma triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, f = 50 hz, d% = 50 60 w maximum average gate power p g(av) 10 maximum peak positi ve gate current i gm t j = t j maximum, t p ? 5 ms 10 a maximum peak positi ve gate voltage +v gm 20 v maximum peak negati ve gate voltage -v gm 5 maximum dc gate currrent required to trigger i gt t j = 25 c, v a = 12 v, r a = 6 ? 200 ma maximum dc gate voltag e required to trigger v gt 3v maximum dc gate curr ent not to trigger i gd t j = t j maximum, rated v drm applied 20 ma maximum dc gate volt age not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating juncti on temperature range t j -40 to 125 c maximum storage temperature range t stg -40 to 150 maximum thermal resistan ce, junction to case r thjc dc operation 0.10 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.03 mounting force, 10 % n on-lubricate d threads 48.5 (425) n m (lbf in) approximate weight 535 g case style see dimensions - link at the end of datasheet to-209ae (to-118) ? r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.011 0.008 t j = t j maximum k/w 120 0.013 0.014 90 0.017 0.018 60 0.025 0.026 30 0.041 0.042
vs-st303sp series www.vishay.com vishay semiconductors revision: 08-jul-14 4 document number: 94375 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ratings ch aracteristics fig. 2 - current ratings characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 maximum allowable case temperature (c) 30 60 90 120 180 average on-state current (a) conduction angle st303s se rie s r ( d c ) = 0 . 1 0 k/ w thjc 40 50 60 70 80 90 100 110 120 130 0100200300400500 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period st3 0 3 s se r i e s r (dc) = 0.10 k/ w thjc 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 0 1 k / w - d e l t a r t h s a 0 . 3 k / w 0 . 5 k / w 0 . 2 k / w 0 . 1 6 k / w 0 . 1 2 k / w 0 . 0 6 k/ w 0 . 0 8 k / w 0 . 0 3 k / w 0 100 200 300 400 500 600 0 50 100 150 200 250 300 180 120 90 60 30 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) st303s series t = 1 2 5 c j 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 0 1 k / w - d e l t a r t h s a 0 . 3 k / w 0 . 5 k / w 0 . 2 k / w 0 . 1 2 k / w 0 . 0 6 k / w 0 . 0 3 k / w 0 100 200 300 400 500 600 700 800 900 0 50 100150200250300350400450500 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) st3 0 3 s se r i e s t = 125c j
vs-st303sp series www.vishay.com vishay semiconductors revision: 08-jul-14 5 document number: 94375 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current fig. 7 - on-state volt age drop characteristics fig. 8 - thermal impedance z thjc characteristics fig. 9 - reverse recovered charge characteristics fig. 10 - reverse recovery current characteristics 3000 3500 4000 4500 5000 5500 6000 6500 7000 110100 numb er of eq ua l amplitud e half cycle current pulses (n) pe a k ha lf s ine wave on-state current (a) initia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st3 0 3 s se r i e s at any rated load condition and with ra t e d v ap p lie d fo llo w ing surg e . rrm 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 0.01 0.1 1 pulse train duration (s) versus pulse train duration. control of conduction may not be maintained. peak half sine wave on-state current (a) initial t = 125c no voltage reapplied rated v reapplied rrm j st3 0 3 s se r i e s maximum non repetitive surge current 100 1000 10000 12345678 t = 2 5 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 1 2 5 c j st3 0 3 s se r i e s 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 sq u a r e w a v e pu l se d u r a t i o n ( s) thjc transient thermal impedance z (k/w) st e a d y st a t e v a l u e r = 0 . 1 0 k/ w (dc operation) thjc st3 0 3 s se r i e s 80 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 100 rate of fall of on-state current - di/dt (a/s) i = 500 a 300 a 200 a 100 a 50 a maximum reverse recovery charge - qrr (c) st3 0 3 s se r i e s t = 1 2 5 c j t m 20 40 60 80 100 120 140 160 180 10 20 30 40 50 60 70 80 90 100 rate of fall of on-state current - di/ dt (a/ s) i = 500 a 300 a 200 a 100 a 50 a maximum reverse recovery current - irr (a) st3 0 3 s se r i e s t = 125 c j tm
vs-st303sp series www.vishay.com vishay semiconductors revision: 08-jul-14 6 document number: 94375 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - frequency characteristics fig. 12 - frequency characteristics fig. 13 - frequency characteristics 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pu l se ba se w i d t h ( s) pea k o n-st a t e c urre n t ( a) 1000 1500 200 500 snub b er c irc uit r = 10 ohms c = 0.47 f v = 80% v s s d drm 2000 st3 0 3 s s eries sinusoida l pulse t = 40c c tp 1 e1 1 e2 1 e3 1 e4 50 hz 400 100 pu l se ba se w id t h ( s) 1000 1500 200 500 st3 0 3 s se r i e s si n u so i d a l p u l se t = 6 5 c c sn u b b e r c i r c u i t r = 10 ohms c = 0.47 f v = 80% v s s d drm tp 1e0 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 100 1500 200 pu l se ba se w id t h ( s) peak on-state current (a) 2500 400 1000 50 hz 500 sn u b b e r c i r c u i t r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm st3 0 3 s se r i e s trapezoidal pulse t = 4 0 c di/dt = 50a/s c 2000 1e1 1e2 1e3 1e4 50 hz 400 100 1000 1500 200 pu lse ba se w id t h ( s) 500 s nubber circuit r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm s t3 0 3 s se r i e s t rapezoidal pulse t = 65c di/dt = 50a/s c 2000 1e0 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 1000 1500 200 pu l se ba se w id t h ( s) peak on-state current (a) 2000 snub ber circ uit r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm st3 0 3 s se r i e s trapezoidal pulse t = 4 0 c d i/ d t = 100a/ s c tp 500 1 e1 1 e2 1 e3 1 e4 50 hz 400 100 1000 1500 200 pu l se ba se w id t h ( s) s t3 0 3 s s eries trapezoidal pulse t = 6 5 c d i/ d t = 100a/ s c sn u b b e r c i r c u i t r = 10 ohms c = 0.47 f v = 80% v s s d drm 2000 tp 500
vs-st303sp series www.vishay.com vishay semiconductors revision: 08-jul-14 7 document number: 94375 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 14 - maximum on-state energy power loss characteristics fig. 15 - gate characteristics 1e1 1e2 1e3 1e4 1e5 1 e1 1 e2 1 e3 1 e4 pu lse ba se w id t h ( s) 20 joules p er p ulse 2 1 peak on-state current (a) 0.5 10 5 3 0.4 st3 0 3 s se r i e s sinusoid al p ulse tp 1e1 1e2 1e3 1e4 pu lse ba se w id t h ( s) 20 jo ule s p er p u lse 2 1 0.5 10 5 st3 0 3 s se r i e s rectangular pulse di/dt = 50a/s tp 3 0.4 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd ig d (b) (a) tj = 2 5 c tj = 1 2 5 c tj = - 4 0 c (1) (2) insta nt a ne ous ga te current (a) i n st a n t a n e o u s g a t e v o l t a g e ( v ) rectangular gate pulse a) recommended load line for b) recommended load line for <=30% rated di/ dt : 10v, 10ohms rated d i/ dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) pgm = 10w, tp = 20ms (2) pgm = 20w, tp = 10ms (3) pgm = 40w, tp = 5ms (4) pgm = 60w, tp = 3.3ms (3) de vic e: st303s series (4) frequency limited by pg(av)
vs-st303sp series www.vishay.com vishay semiconductors revision: 08-jul-14 8 document number: 94375 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95080 - thyristor - essential part number - 3 = fast turn-off - s = compression bonding stud - voltage code x 100 = v rrm - p = stud base 3/4" 16unf-2a - reapplied dv/dt code (for t q test condition) -t q code - 0 = eyelet terminals 1 = fast-on terminals dv/dt - t q combinations available dv/dt (v/s) 200 10 t q (s) fn 20 fk 20 fk up to 800 v t q (s) only for 1000/1200 v (see voltage ratings table) (gate and auxiliary cathode leads) (gate and auxiliary cathode leads) device code 5 1 3 2 4 6 7 8 9 10 11 st 30 3 s 12 p f k 0 p 1 - vishay semiconductors product 11 - none = standard production - p = lead (pb)-free vs- 2 3 4 5 6 7 9 10 8
document number: 95080 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 02-aug-07 1 to-209ae (to-118) outline dimensions vishay semiconductors dimensions in millimeters (inches) note (1) for metric device: m24 x 1.5 - length 21 (0.83) maximum red cathode red silicon rubber 10.5 (0.41) nom. 245 (9.65) 10 (0.39) white gate 4.3 (0.17) dia. ceramic housing white shrink 47 (1.85) max. 245 (9.65) 255 (10.04) 38 (1.50) max. dia. 22 (0.87) max. 21 (0.82) max. sw 45 flexible leads 4.5 (0.18) max. c.s. 50 mm 2 (0.078 s.i.) red shrink 49 (1.92) max. 3/4"16 unf-2a (1) 27.5 (1.08) max. fast-on terminals amp. 280000-1 ref-250 9.5 (0.37) min. 22 (0.86) min.
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